首页 > 推广型号列表 > XC3S500E-4FG320C

XC3S500E-4FG320C

XC3S500E-4FG320C资料
	XC3S500E-4FG320C PDF Download

File Size : 116 KB Manufacturer:XILINX Description:International Rectifiers RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, In- ternational Rectifiers RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviv- ing transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifiers patented HEXFET technology, the user can expect the highest quality and reliability in the industry. RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paral- leling and temperature stability of the electrical pa- rameters. They are well-suited for applications such as switching power supplies, motor controls, invert- ers, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.

	1PCS	100PCS	1K	10K
价格


型号：XC3S500E-4FG320C 厂家：XILINX 封装：360 批号：05+ 数量：BGA 说明：


运费：所在地：新旧程度：