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XC2VP20-5FF1152C

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File Size : 116 KB Manufacturer:XILINX Description:Notes: 1. Measurements at 900MHz were made using an ICM fixture with a double stub tuner at the input tuned for low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements. 2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information. 3. P1dB measurements are performed with passive biasing. Quiescent drain current, Idsq, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or point. At lower values of Idsq, the device is running close to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 2.7V and Idsq = 5 mA, Id increases to 15 mA as a P1dB of +14.5 dBm is approached.

	1PCS	100PCS	1K	10K
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型号：XC2VP20-5FF1152C 厂家：XILINX 封装：50 批号：05+ 数量：BGA 说明：


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