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| M41T00M6E资料 | |
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M41T00M6E PDF Download |
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File Size : 116 KB
Manufacturer:ST Description:The SRAM will not latch up due to any of the above radiation exposure conditions when applied under recommended operating conditions. Fabrication with the SIMOX substrate material provides oxide isolation between adjacent PMOS and NMOS transistors and eliminates any potential SCR latchup structures. Sufficient transistor body tie connec- tions to the p- and n-channel substrates are made to ensure no source/drain snapback occurs. |
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| 1PCS | 100PCS | 1K | 10K | ||
| 价 格 | |||||
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型 号：M41T00M6E 厂 家：ST 封 装：06+ 批 号：1k 数 量：8-SOIC 说 明： |
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运 费： 所在地： 新旧程度： |
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| 联系人：关女士 |
| 电 话：86-75584720945 |
| 手 机： |
| QQ：371911117 |
| MSN：gjk8477@hotmail.com,jessica848377@yahoo.com.cn |
| 传 真：86-755 25621209 |
| EMail：kingrand_tek@163.com |
| 公司地址： Huaqiang Electronic World, Futian District, Shenzhen, China |
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