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| LM358MX资料 | |
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LM358MX PDF Download |
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File Size : 116 KB
Manufacturer:NS Description:Notes: 8. Test conditions assume signal transition time of 1V/ns or less, timing reference levels of VCC(typ.)/2, input pulse levels of 0 to VCC(typ.), and output loading of the specified IOL. 9. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than t. 10. tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high-impedance state. 11. The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, and CE2 = VIH. All signals. 12. Device is continuously selected. OE, CE1 = VIL, CE2 = VIH. 13. WE is HIGH for Read cycle. |
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| 1PCS | 100PCS | 1K | 10K | ||
| 价 格 | |||||
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型 号：LM358MX 厂 家：NS 封 装：06+ 批 号：5k 数 量： 说 明： |
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运 费： 所在地： 新旧程度： |
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| 联系人：关女士 |
| 电 话：86-75584720945 |
| 手 机： |
| QQ：371911117 |
| MSN：gjk8477@hotmail.com,jessica848377@yahoo.com.cn |
| 传 真：86-755 25621209 |
| EMail：kingrand_tek@163.com |
| 公司地址： Huaqiang Electronic World, Futian District, Shenzhen, China |
