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| FAN5059M资料 | |
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FAN5059M PDF Download |
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File Size : 116 KB
Manufacturer: Description:The SRAM will meet all stated functional and electrical specifications over the entire operating temperature range after the specified total ionizing radiation dose. All electrical and timing performance parameters will remain within specifications after rebound at VDD = 5.5 V and T =125C extrapolated to ten years of operation. Total dose hardness is assured by wafer level testing of process monitor transis- tors and RAM product using 10 keV X-ray and Co60 radiation sources. Transistor gate threshold shift correla- tions have been made between 10 keV X-rays applied at a dose rate of 1x105 rad(SiO2)/min at T = 25C and gamma rays (Cobalt 60 source) to ensure that wafer level X-ray testing is consistent with standard military radiation test environments. |
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| 1PCS | 100PCS | 1K | 10K | ||
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型 号：FAN5059M 厂 家： 封 装： 批 号：20 数 量： 说 明： |
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运 费： 所在地： 新旧程度： |
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| 联系人：关女士 |
| 电 话：86-75584720945 |
| 手 机： |
| QQ：371911117 |
| MSN：gjk8477@hotmail.com,jessica848377@yahoo.com.cn |
| 传 真：86-755 25621209 |
| EMail：kingrand_tek@163.com |
| 公司地址： Huaqiang Electronic World, Futian District, Shenzhen, China |
建议使用分辨率:1024*768