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EP20K400EBC652-1X

EP20K400EBC652-1X资料
EP20K400EBC652-1X
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File Size : 116 KB
Manufacturer:ALTERA
Description:− Read, program, and erase operations   from 2.7 to 3.6 V − Ideal for battery-powered applications Simultaneous Read/Write Operations − Host system can program or erase in one   bank while simultaneously reading from any   sector in the other bank with zero latency   between read and write operations High Performance − 70 and 80 ns access time versions with   30pF load − 90 and 120 ns access time versions with   100pF load Ultra Low Power Consumption (Typical Values) − Automatic sleep mode current: 200 nA − Standby mode current: 200 nA − Read current: 10 mA (at 5 MHz) − Program/erase current: 15 mA Boot-Block Sector Architecture with 39 Sectors in Two Banks for Fast In-System Code Changes Secured Sector: An Extra 64 Kbyte Sector that Can Be: − Factory locked and identifiable: 16 bytes   available for a secure, random factory-   programmed Electronic Serial Number − Customer lockable: Can be read, program-   med, or erased just like other sectors Flexible Sector Architecture − Sector Protection allows locking of a   sector or sectors to prevent program or   erase operations within that sector − Temporary Sector Unprotect allows   changes in locked sectors (requires high   voltage on RESET# pin) Automatic Erase Algorithm Erases Any Combination of Sectors or the Entire Chip Automatic Program Algorithm Writes and Verifies Data at Specified Addresses Compliant with Common Flash Memory Interface (CFI) Specification Minimum 100,000 Write Cycles per Sector (1,000,000 cycles Typical) Compatible with JEDEC Standards − Pinout and software compatible with   single-power supply Flash devices − Superior inadvertent write protection
 
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型 号:EP20K400EBC652-1X
厂 家:ALTERA
封 装:22
批 号:03+
数 量:BGA
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公司地址: Huaqiang Electronic World, Futian District, Shenzhen, China
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