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| DA82562ET资料 | |
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DA82562ET PDF Download |
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File Size : 116 KB
Manufacturer:INTEL Description:Notes: 11. Test conditions assume signal transition time of 1V/ns or less, timing reference levels of VCC(typ.)/2, input pulse levels of 0 to VCC(typ.), and output loading of the specified IOL. 12. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 13. If both byte enables are toggled together, this value is 10 ns. 14. tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high-impedance state. 15. The internal Write time of the memory is defined by the overlap of WE, CE = VIL, BHE and/or BLE = VIL. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that terminates the write. |
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| 1PCS | 100PCS | 1K | 10K | ||
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型 号：DA82562ET 厂 家：INTEL 封 装：237 批 号：03+ 数 量：SSOP-56 说 明： |
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运 费： 所在地： 新旧程度： |
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| 联系人：关女士 |
| 电 话：86-75584720945 |
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| 公司地址： Huaqiang Electronic World, Futian District, Shenzhen, China |
